参数资料
型号: MTSF2P03HDR2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MICROPAK-8
文件页数: 6/12页
文件大小: 285K
代理商: MTSF2P03HDR2
MTSF2P03HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
30
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
25
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.9
3.8
3.0
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 10 Vdc, ID = 2.4 Adc)
(VGS = 4.5 Vdc, ID = 1.2 Adc)
RDS(on)
70
110
90
150
m
Forward Transconductance (VDS = 15 Vdc, ID = 1.2 Adc)
(Note 2.)
gFS
2.0
3.1
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
450
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
220
Transfer Capacitance
f = 1.0 MHz)
Crss
70
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
12
ns
Rise Time
(VDS = 15 Vdc, ID = 2.4 Adc,
tr
58
TurnOff Delay Time
(VDS
15 Vdc, ID
2.4 Adc,
VGS = 10 Vdc, RG = 6.0 ) (Note 2.)
td(off)
30
Fall Time
tf
50
TurnOn Delay Time
td(on)
19
Rise Time
(VDD = 15 Vdc, ID = 1.2 Adc,
tr
39
TurnOff Delay Time
(VDD
15 Vdc, ID
1.2 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (Note 2.)
td(off)
35
Fall Time
tf
37
Gate Charge
QT
16.6
23
nC
(VDS = 24 Vdc, ID = 2.4 Adc,
Q1
1.6
(VDS
24 Vdc, ID
2.4 Adc,
VGS = 10 Vdc) (Note 2.)
Q2
5.4
Q3
4.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 2.4 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.9
0.7
1.3
Vdc
Reverse Recovery Time
trr
32
ns
(IS = 2.4 Adc, VGS = 0 Vdc,
ta
21
(IS
2.4 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s) (Note 2.)
tb
11
Reverse Recovery Stored Charge
QRR
0.036
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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