参数资料
型号: MTSF2P03HDR2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 2700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MICROPAK-8
文件页数: 7/12页
文件大小: 285K
代理商: MTSF2P03HDR2
MTSF2P03HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
4.5 V
VGS = 10 V
TJ = 25°C
3.5 V
3.3 V
4.5 V
6 V
VGS = 10 V
2.9 V
2.7 V
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.5
2
0
1
3
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 3. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.04
Figure 5. OnResistance versus
GatetoSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. OnResistance versus Drain Current
and Gate Voltage
1
100
Figure 7. OnResistance Variation
with Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 8. DraintoSource Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = 55°C
25
°C
100
°C
4
2
4
1
3.5
4
2
0.14
01
2
10
0
5
15
25
30
0.08
3
34
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.2 A
125
75
25
VGS = 0 V
1
3
2.5
0.10
0.12
1000
25
°C
0.2
0.25
0.3
0.15
0.05
0.1
24
8
6
1
VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID = 2.4 A
TJ = 25°C
0
0.06
5
4.1 V
3.9 V
3.7 V
5
1.5
4.5
35
7
5
0.1
10
3.1 V
0.5
2.5
4.5
1.5
3.5
910
0
20
100
°C
125
°C
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