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参数资料
| 型号： | MTW7N80E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 107K |
| 代理商： | MTW7N80E |
MTW7N80E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
04
8
12
16
20
14
8
2
6
10
14
18
4
6 V
7 V
VGS = 10 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
10
14
8
4
0
TJ = -55°C
25°C
100°C
2
6
TJ = 25°C
VGS = 10 V
15 V
0.80
0.96
1.08
0.84
02
8
14
VGS = 0 V
0
300
700
1
1000
100000
200
500
10
25°C
100°C
TJ = 125°C
04
8
10
0.2
0.6
1.0
2.0
0.8
0.4
612
14
TJ = 100°C
25°C
-55°C
VGS = 10 V
-50
0
0.4
0.8
1.6
2.4
-25
0
25
50
75
100
125
150
VGS = 10 V
ID = 3.5 A
5 V
10
6
2
10000
0.92
1.00
1.04
0.88
46
10
2.0
1.2
400
600
800
100
0
12
5.6
1.2
1.6
1.8
1.4
2
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW8N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTW8N60E/D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTWB 1552 | 制造商:Signal Construct GmbH 功能描述: |
| MTWB 1562 | 制造商:Signal Construct GmbH 功能描述: |
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