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参数资料
| 型号： | MTY25N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 25 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | CASE 340G-02, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 192K |
| 代理商： | MTY25N60E |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTY25N60E/D
MTY25N60E
Preferred Device
Power MOSFET
25 Amps, 600 Volts
NChannel TO264
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications
in power supplies, converters and PWM motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
600
Vdc
DrainGate Voltage (RGS = 1 M)
VDGR
600
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current Continuous @ TC = 25°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
25
65
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
300
2.38
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak
IL = 25 Apk, L = 10 mH, RG = 25 )
EAS
3000
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.42
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
25 AMPERES
600 VOLTS
RDS(on) = 210 m
Device
Package
Shipping
ORDERING INFORMATION
MTY25N60E
TO264
25 Units/Rail
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO264
CASE 340G
Style 1
MTY25N60E
NChannel
S
LLYWW
1
2
3
1
Gate
3
Source
2
Drain
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