参数资料
型号: MUN2134T3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-59, 3 PIN
文件页数: 9/38页
文件大小: 385K
代理商: MUN2134T3
7–11
Surface Mount Information
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to mini-
mize the thermal stress to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°C.
The soldering temperature and time should not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5
°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. Taken together, these control settings make
up a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remem-
bers these profiles from one operating session to the next.
Figure 2 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems, but it is a
good starting point. Factors that can affect the profile include
the type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177 –189
°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
200
°C
150
°C
100
°C
50
°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100
°C
150
°C
160
°C
170
°C
140
°C
Figure 2. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
相关PDF资料
PDF描述
MUN2131T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2116T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2114T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2111T3 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN2132T3G 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MUN2135T1G 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B
MUN2136 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN2136T1 功能描述:TRANS BRT PNP 100MA 50V SC59 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路﹐预偏压式 系列:- 标准包装:10,000 系列:- 晶体管类型:NPN - 预偏压 电流 - 集电极 (Ic)(最大):100mA 电压 - 集电极发射极击穿(最大):50V 电阻器 - 基极 (R1)(欧):47k 电阻器 - 发射极 (R2)(欧):47k 在某 Ic、Vce 时的最小直流电流增益 (hFE):70 @ 5mA,5V Ib、Ic条件下的Vce饱和度(最大):300mV @ 500µA,10mA 电流 - 集电极截止(最大):- 频率 - 转换:100MHz 功率 - 最大:250mW 安装类型:表面贴装 封装/外壳:SC-70,SOT-323 供应商设备封装:PG-SOT323-3 包装:带卷 (TR) 其它名称:SP000756242
MUN2136T1G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Bias Resistor Transistors
MUN2137 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon