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参数资料
| 型号： | MUN2211T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 12/18页 |
| 文件大小： | 160K |
| 代理商： | MUN2211T3 |
MUN2211T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
-
100
nAdc
Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
-
500
nAdc
Emitter‐Base Cutoff Current
MUN2211T1, G
(VEB = 6.0 V, IC = 0)
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
IEBO
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
-
Vdc
Collector‐Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
-
Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN2211T1, G
(VCE = 10 V, IC = 5.0 mA)
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
hFE
35
60
80
160
3.0
8.0
15
80
160
60
100
140
350
5.0
15
30
200
150
140
350
-
Collector‐Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2236T1, G
(IC = 10 mA, IB = 5 mA)
MUN2230T1, G
MUN2231T1, G
MUN2237T1, G
MUN2241T1, G
(IC = 10 mA, IB = 1 mA)
MUN2215T1, G
MUN2216T1, G
MUN2232T1, G
MUN2234T1, G
MUN2240T1, G
VCE(sat)
-
0.25
Vdc
4. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN2211T3G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2212 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN2212RT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MUN2212T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2212T1G | 功能描述:开关晶体管 - 偏压电阻器 SS BR XSTR NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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