- 您现在的位置：买卖IC网 > PDF目录98049 > MUN5115T3 (MOTOROLA INC) 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MUN5115T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 196K |
| 代理商： | MUN5115T3 |
MUN5111T1 SERIES
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Ambient (surface mounted)
RθJA
833
°C/W
Operating and Storage Temperature Range
TJ, Tstg
–65 to +150
°C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
10
°C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
500
nAdc
Emitter–Base Cutoff Current
MUN5111T1
(VEB = 6.0 V, IC = 0)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
IEBO
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector–Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
—
Vdc
Collector–Emitter Breakdown Voltage (3.) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
Vdc
ON CHARACTERISTICS (3.)
DC Current Gain
MUN5111T1
(VCE = 10 V, IC = 5.0 mA)
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
140
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat)
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MUN5113T1
VOL
—
0.2
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相关PDF资料 |
PDF描述 |
|---|---|
| MUN5112T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5113T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5132T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5116T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5212T3 | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN5116 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5116DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5116DW1G | 制造商:ON Semiconductor 功能描述: |
| MUN5116DW1T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN5116DW1T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。