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参数资料
| 型号： | MUN5131T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 196K |
| 代理商： | MUN5131T3 |
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25
°C
PD
150
1.2
mW
mW/
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1 (2.)
MUN5116T1 (2.)
MUN5130T1 (2.)
MUN5131T1 (2.)
MUN5132T1 (2.)
MUN5133T1 (2.)
MUN5134T1 (2.)
MUN5135T1 (2.)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
10
22
47
10
4.7
1.0
2.2
4.7
22
2.2
10
22
47
∞
1.0
2.2
4.7
47
3000/Tape & Reel
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
CASE 419
SC–70/SOT–323
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
相关PDF资料 |
PDF描述 |
|---|---|
| MUN5115T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5112T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5113T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5132T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5116T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN5131TIG | 制造商:ON Semiconductor 功能描述: |
| MUN5132 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5132DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5132DW1T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN5132DW1T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
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