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| 型号： | MUR1100EG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 125K |
| 描述： | DIODE ULTRA FAST 1A 1000V DO-41 |
| 产品目录绘图： | Rectifier DO-41 Pkg |
| 标准包装： | 1,000 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1000V（1kV） |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.75V @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 100ns |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 1000V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
| 产品目录页面： | 1566 (CN2011-ZH PDF) |
| 其它名称： | MUR1100EG-ND MUR1100EGOS |
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Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 4
1
Publication Order Number:
MUR180E/D
MUR180E, MUR1100E
SWITCHMODE
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
These state?of?the?art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
?
10 mjoules Avalanche Energy Guaranteed
?
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
?
Ultrafast 75 Nanosecond Recovery Time
?
175°C Operating Junction Temperature
?
Low Forward Voltage
?
Low Leakage Current
?
High Temperature Glass Passivated Junction
?
Reverse Voltage to 1000 V
?
These are Pb?Free Devices*
Mechanical Characteristics:
?
Case: Epoxy, Molded
?
Weight: 0.4 Gram (Approximately)
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
?
Shipped in Plastic Bags; 1,000 per Bag
?
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
?
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR180E
MUR1100E
V
V
RRM
RWM
VR
800
1000
V
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
IF(AV)
1.0 @
TA
= 95
°C
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage
Temperature Range
TJ, Tstg
?65 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ULTRAFAST RECTIFIERS
1.0 AMPERES, 800?1000 VOLTS
http://onsemi.com
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A = Assembly Location
MUR1x0E = Device Code
x 8 or 10
Y = Year
WW = Work Week
=Pb?Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
A
MUR1x0E
YYWW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR1100EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 1KV AXIAL |
| MUR1100ERL | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR1100ERLG | 功能描述:整流器 1000V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR1100-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:1A ULTRA FAST EFFICIENT RECTIFIER |
| MUR1100PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:HIGH EFFICIENCY RECTIFIER |
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