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| 型号： | MUR115 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 115K |
| 描述： | DIODE ULTRA FAST 1A 150V DO-41 |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 1,000 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 150V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 875mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 35ns |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 150V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
IF(AV)
1.0 @ TA
= 130
°C
1.0 @ TA
= 120
°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Ambient
RJA
Note 2
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 1.0 Amp, T
J
= 150
°C)
(iF
= 1.0 Amp, T
J
= 25
°C)
vF
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
50
2.0
150
5.0
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(IF
= 1.0 A, di/dt = 100 A/
s, IREC
to 1.0 V)
tfr
25
50
ns
Typical Peak Reverse Recovery Current
(IF
= 1.0 A, di/dt = 50 A/
s)
IRM
0.85
A
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR115G | 功能描述:整流器 150V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR115GP | 制造商:CHENYI 制造商全称:Shanghai Lunsure Electronic Tech 功能描述:1.0Amp glass passivated super fast recovery rectifier 50to600 volts |
| MUR115GP-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 150V 1A 2-Pin DO-41 T/R |
| MUR115-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:1A ULTRA FAST EFFICIENT RECTIFIER |
| MUR115PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:HIGH EFFICIENCY RECTIFIER |
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