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| 型号： | MUR115S |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封装： | GREEN, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 117K |
| 代理商： | MUR115S |
1.0 AMP. Surface Mount Ultrafast Power Rectifiers
MUR1XXS
= Specific Device Code
G
= Green Compound
Y
= Year
M
= Work Month
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MUR
105S
MUR
110S
MUR
115S
MUR
120S
MUR
140S
MUR
160S
Units
VRRM
50
100
150
200
400
600
V
VRMS
35
70
105
140
280
420
V
VDC
50
100
150
200
400
600
V
IF(AV)
A
IFSM
A
IR
uA
Trr
ns
Trr
ns
RθJL
OC/W
TJ
OC
TSTG
OC
Note 2: Reverse Recovery Test Condition:IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Reverse Recovery Test Condition:IF=1A, di/dt=50A/us, VR=30V, IRR=10% IRM
-65 to + 175
17
Built-in strain relief
Qualified as per AEC-Q101
Hideal for automated placement
Maximum Reverse Recovery Time (Note 3)
Case: SMB/DO-214AA
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
40
SMB/DO-214AA
Maximum DC Reverse Current at Rated DC Blocking Voltage
@ TA=25 ℃
@ TA=150 ℃
Maximum Reverse Recovery Time (Note 2)
Dimensions in inches and (millimeters)
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guarateed:
260℃/10 seconds on terminals
1.0
Low profile package
Typical Thermal Resistance (Note 4)
Type Number
Note 1: Pulse Test with PW=300usec, 1% Duty Cycle
Operating Temperature Range
Storage Temperature Range
Version:D11
Note 4: Mount on Cu-Pad Size 10mm x 10mm x 1.6mm on P.C.B.
Maximum DC Blocking Voltage
35
Maximum Average Forward Rectified Current
MUR105S - MUR160S
Polarity: Indicated by cathode band
Maximum RMS Voltage
Features
Mechanical Data
For surface mounted application
Easy pick and place
Weight:0.097 grams
Plastic material used carriers Underwritters
Laboratory Classcification 94V-0
Marking Diagram
V
Maximum Repetitive Peak Reverse Voltage
Maximum Ratings and Electrical Characteristics
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Terminals: Pure tin plated, leads free, solderable
per MIL-STD-750, Method 2026
Molding Compound meet UL 94V-0 flammability rating
Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A
@ TA=25℃
@ TA=150℃
VF
35
2
50
75
0.875
0.710
1.25
1.05
5
150
25
50
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
相关PDF资料 |
PDF描述 |
|---|---|
| MUR115 | SILICON, SIGNAL DIODE, DO-41 |
| MUR140 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| MUR1515R | 15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MUR1510R | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MUR160A | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR115-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 150V 1A 2-Pin DO-41 T/R |
| MUR120 | 功能描述:整流器 200V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR120/54 | 功能描述:DIODE FAST 1A 200V DO-204AC RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MUR120/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SWITCHMODE? Power Rectifier |
| MUR120_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Power Rectifiers |
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