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| 型号： | MUR180E |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 125K |
| 描述： | DIODE ULTRA FAST 1A 800V DO-41 |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 1,000 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 800V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.75V @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 100ns |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 800V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
| 其它名称： | MUR180EOS |
MUR180E, MUR1100E
http://onsemi.com
4
MERCURY
SWITCH
VD
ID
DUT
40 mH COIL
+VDD
IL
S1
BVDUT
IL
ID
VDD
t0
t1
t2
t
Figure 6. Test Circuit
Figure 7. Current?Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD
power supply while the diode is in
breakdown (from t1
to t
2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR1100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 V, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
BV
WAVAL
1
2LI
2
LPK
DUT
BVDUT–V
DD
WAVAL
1
2LI
2
LPK
Figure 8. Current?Voltage Waveforms
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1 CH2 REF REF
CH1
CH2
1 217:33 HRSACQUISITIONS
SAVEREF SOURCE
STACK
A
20s
953 V VERT
500V
50mV
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR180E/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SWITCHMODE? Power Rectifiers |
| MUR180E_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SWITCHMODE Power Rectifiers |
| MUR180EG | 功能描述:整流器 800V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR180EG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 1A 800V AXIAL 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE, 1A, 800V AXIAL |
| MUR180ERL | 功能描述:整流器 800V 1A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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