参数资料
型号: MURB820-1
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
封装: TO-262, 3 PIN
文件页数: 3/7页
文件大小: 94K
代理商: MURB820-1
Document Number: 93123
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 24-Jun-08
3
MURB820/MURB820-1
Ultrafast Rectifier,
8 A FRED PtTM
Vishay High Power Products
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
T
J = 175 °C
T
J = 150 °C
T
J = 25 °C
0
1.8
0.4
0.8
VF - Forward Voltage Drop (V)
I F
-
Instantaneous
Forwar
d
Current
(A)
100
1.2
0.1
0.2
0.6
1.0
1.4
1.6
0.01
0.1
1
10
100
0
100
150
VR - Reverse Voltage (V)
I R
-
Re
ver
se
Current
(A)
T
J = 175 °C
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 25 °C
200
250
50
0.001
100
1000
1
10
100
1000
10
VR - Reverse Voltage (V)
C
T
-
J
unction
Capacitance
(pF)
T
J = 25 °C
0.01
0.1
10
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
-
Thermal
Impedance
(°C/W)
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak T
J = PDM x ZthJC + TC
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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