参数资料
型号: MURS120-E3/2CT
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件页数: 2/4页
文件大小: 90K
代理商: MURS120-E3/2CT
www.vishay.com
2
Document Number 88687
03-Jul-06
Vishay General Semiconductor
MURS120
Note:
(1) Pulse test: tp = 300 s, duty cycle ≤ 2 %
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage (1)
at IF = 1.0 A,
Tj = 25 °C
Tj = 150 °C
VF
0.875
0.71
V
Maximum instantaneous reverse current at
rated DC blocking voltage (1)
Tj = 25 °C
Tj = 150 °C
IR
2.0
50
A
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery time
at IF = 1.0 A, di/dt = 50 A/s,
VR = 30 V, Irr = 10 % IRM
trr
35
ns
Maximum forward recovery time
at IF = 1.0 A, di/dt = 100 A/s,
recovery to 1.0 V
tfr
25
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance junction to ambient
RθJL
13
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS120-E3/52T
0.096
52T
750
7" Diameter Plastic Tape & Reel
MURS120-E3/5BT
0.096
5BT
3200
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0
2.0
3.0
4.0
5.0
6.0
0
25
50
75
100
125
150
175
1.0
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
1
100
10
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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