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参数资料
| 型号： | MV1N6507 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-14 |
| 文件页数： | 1/2页 |
| 文件大小： | 80K |
| 代理商： | MV1N6507 |
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6507
DESCRIPTION
APPEARANCE
These low capacitance diode arrays with common anode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to ground (see figure 1). This circuit application is further complimented by the
1N6506 (separate data sheet) that has a common cathode. An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
14-PIN Ceramic DIP
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6507 for a JANTX screen.
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20
μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
IO Continuous Forward Current of 300 mA (Notes 1 & 3)
IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25
oC
600 mW Power Dissipation per Package @ 25
oC (Note 4)
Operating Junction Temperature range –65 to +150
oC
Storage Temperature range of –65 to +200
oC
14-PIN Ceramic DIP
Weight 2.05 grams (approximate)
Marking: Logo, part number, date code
Pin #1 to the left of the indent on top of package
Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/
oC above +25oC
NOTE 4: Derate at 4.0 mW/
oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
FORWARD
VOLTAGE
VF2
IF = 500 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
PART
NUMBER
V
μA
pF
ns
1N6507
1
1.5
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 us +/- 50 s, duty cycle <2%, 90 s after leading edge.
Microsemi
Scottsdale Division
Page 1
Copyright
2006
01-24-2006 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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