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参数资料
| 型号： | MV2111 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 变容二极管 |
| 英文描述： | 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| 封装： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 73K |
| 代理商： | MV2111 |
Silicon Tuning Diodes
These devices are designed in the popular PLASTIC PACKAGE for
high volume requirements of FM Radio and TV tuning and AFC,
general frequency control and tuning applications. They provide
solid–state reliability in replacement of mechanical tuning methods.
Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
MAXIMUM RATINGS
Rating
Symbol
MV21xx
MMBV21xxLT1
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
280
2.8
225
1.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2107LT1 = 4W
MMBV2103LT1 = 4H
MMBV2108LT1 = 4X
MMBV2105LT1 = 4U
MMBV2109LT1 = 4J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
30
—
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
—
0.1
Adc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
—
280
—
ppm/
°C
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8–100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
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相关代理商/技术参数 |
参数描述 |
|---|---|
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