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参数资料
| 型号： | MV2111 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 变容二极管 |
| 英文描述： | 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| 封装： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 73K |
| 代理商： | MV2111 |
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1
MMBV2109LT1
http://onsemi.com
3
TYPICAL DEVICE CHARACTERISTICS
Figure 1. Diode Capacitance versus Reverse Voltage
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
Figure 4. Figure of Merit versus Reverse Voltage
VR, REVERSE VOLTAGE (VOLTS)
1.0
2.0
0.2
10
30
20
1.0
2.0
5.0
10
1000
50
20
100
500
5.0
0.5
0.1
200
C
T,
DIODE
CAP
ACIT
ANCE
(pF)
TA = 25°C
f = 1.0 MHz
MV2115
MMBV2109LT1/MV2109
1.040
1.030
1.020
1.010
1.000
0.990
0.980
TJ, JUNCTION TEMPERATURE (°C)
+125
-75
-25
0
+25
+50
-50
+75
NORMALIZED
DIODE
CAP
ACIT
ANCE
+100
0.970
0.960
VR = 2.0 Vdc
VR = 4.0 Vdc
VR = 30 Vdc
100
50
20
10
5.0
0.01
VR, REVERSE VOLTAGE (VOLTS)
5.0
10
20
15
25
I
30
,REVERSE
CURRENT
(nA)
R
0.02
0.05
0.10
0.20
0.50
1.0
2.0
TA = 125°C
TA = 75°C
TA = 25°C
100
200
500
1000
5000
2000
1.0
2.0
5.0
7.0
10
3.0
20
VR, REVERSE VOLTAGE (VOLTS)
Q,
FIGURE
OF
MERIT
2000
1000
200
500
300
100
f, FREQUENCY (MHz)
10
30
50
70
Q,
FIGURE
OF
MERIT
100
3000
50
30
20
10
20
200 250
TA = 25°C
f = 50 MHz
MV2115
TA = 25°C
VR = 4.0 Vdc
MV2115
Figure 5. Figure of Merit versus Frequency
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
3.0
0.3
0
10
20
50
300
3000
30
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
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