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参数资料
| 型号： | MV2111 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 变容二极管 |
| 英文描述： | 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| 封装： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 73K |
| 代理商： | MV2111 |
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1
MMBV2109LT1
http://onsemi.com
2
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
MV2104
10.8
12
13.2
400
2.5
2.9
3.2
MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1/MV2108
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MV2111
42.3
47
51.7
150
2.5
3.0
3.2
MV2115
90
100
110
100
2.6
3.0
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance
bridge
at
the
specified
frequency
and
substituting in the following equations:
Q
+ 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[ 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = –65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85
°C in the following equation, which defines TCC:
TCC +
CT() 85°C) – CT(–65°C)
85
) 65
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
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