参数资料
型号: MV2101
厂商: MOTOROLA INC
元件分类: 变容二极管
英文描述: HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC
文件页数: 1/6页
文件大小: 130K
代理商: MV2101
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Silicon Tuning Diodes
These devices are designed in the popular PLASTIC PACKAGE for high volume
requirements of FM Radio and TV tuning and AFC, general frequency control and
tuning applications.They provide solid–state reliability in replacement of mechanical
tuning methods. Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
MAXIMUM RATINGS
Rating
Symbol
MV21xx
MMBV21xxLT1
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
280
2.8
225
1.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2107LT1 = 4W
MMBV2103LT1 = 4H
MMBV2108LT1 = 4X
MMBV2105LT1 = 4U
MMBV2109LT1 = 4J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
30
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
0.1
Adc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
280
ppm/
°C
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBV2101LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8–100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
2
3
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Motorola, Inc. 1997
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
REV 1
相关PDF资料
PDF描述
MZD11TA 91 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZD56RL 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZD82RL 82 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZP4748ARL 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZPY100RLCTA 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
相关代理商/技术参数
参数描述
MV21010 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GaAs Varactor Diodes Abrupt Junction
MV2101G 功能描述:DIODE TUNING 30V 6.8PF TO92-2 RoHS:是 类别:分离式半导体产品 >> 可变电容二极管(可变电容二极管,变容二极管) 系列:- 产品变化通告:Product Discontinuation 08/Dec/2009 标准包装:3,000 系列:- 电容@ Vr, F:13.5pF @ 4.5V,1MHz 电容比:5.41 电容比条件:C1/C4.5 电压 - 峰值反向(最大):12V 二极管类型:单一 在 Vr、F 时的 Q 值:- 安装类型:表面贴装 封装/外壳:SC-79,SOD-523 供应商设备封装:PG-SC79-2 包装:带卷 (TR) 其它名称:SP000013483
MV2104 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Silicon Tuning Diode
MV2105 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel
MV2105G 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel