- 您现在的位置：买卖IC网 > PDF目录133460 > MV2101 (MOTOROLA INC) HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC PDF资料下载
参数资料
| 型号： | MV2101 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 变容二极管 |
| 英文描述： | HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC |
| 文件页数： | 4/6页 |
| 文件大小： | 130K |
| 代理商： | MV2101 |
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The power dissipation for a surface mount device is a function
of the pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
R
θJA, the thermal resistance from the device junction to ambient;
and the operating temperature, TA. Using the values provided on
the data sheet, PD can be calculated as follows.
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum ratings
table on the data sheet. Substituting these values into the
equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For example, for a
SOT–23 device, PD is calculated as follows.
PD =
150
°C – 25°C
556
°C/W
= 225 milliwatts
The 556
°C/W for the SOT–23 assumes the use of the
recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain/collector pad. By increasing the area of the
drain/collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
technology.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°C.
The soldering temperature and time should not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5
°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
相关PDF资料 |
PDF描述 |
|---|---|
| MZD11TA | 91 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| MZD56RL | 56 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| MZD82RL | 82 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| MZP4748ARL | 22 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| MZPY100RLCTA | 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MV21010 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:GaAs Varactor Diodes Abrupt Junction |
| MV2101G | 功能描述:DIODE TUNING 30V 6.8PF TO92-2 RoHS:是 类别:分离式半导体产品 >> 可变电容二极管（可变电容二极管，变容二极管） 系列:- 产品变化通告:Product Discontinuation 08/Dec/2009 标准包装:3,000 系列:- 电容@ Vr, F:13.5pF @ 4.5V，1MHz 电容比:5.41 电容比条件:C1/C4.5 电压 - 峰值反向(最大):12V 二极管类型:单一 在 Vr、F 时的 Q 值:- 安装类型:表面贴装 封装/外壳:SC-79，SOD-523 供应商设备封装:PG-SC79-2 包装:带卷 (TR) 其它名称:SP000013483 |
| MV2104 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MV2105 | 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| MV2105G | 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。