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参数资料
| 型号： | MWI30-06A7 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIXPACK RBSOA 600V E2 |
| 标准包装： | 6 |
| IGBT 类型： | NPT |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.4V @ 15V，30A |
| 电流 - 集电极 (Ic)（最大）： | 45A |
| 电流 - 集电极截止（最大）： | 600µA |
| Vce 时的输入电容 (Cies)： | 1.6nF @ 25V |
| 功率 - 最大： | 140W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E2 |
| 供应商设备封装： | E2 |
MWI 30-06 A7
MWI 30-06 A7T
IGBT Modules
I C25
= 45 A
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
V CES = 600 V
V CE(sat) typ. = 1.9 V
Type:
MWI 30-06 A7
MWI 30-06 A7T
NTC - Option:
without NTC
with NTC
1
2
3
4
5
6
7
8
9
10
11
12
16
15
14
T
T
NTC
See outline drawing for pin arrangement
E72873
17
IGBTs
Features
●
NPT IGBT technology
Symbol
Conditions
Maximum Ratings
●
low saturation voltage
V CES
V GES
I C25
I C80
RBSOA
t SC
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 33 Ω ; T VJ = 125°C
Clamped inductive load; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 33 Ω ; T VJ = 125°C
600
± 20
45
30
I CM = 60
V CEK ≤ V CES
10
V
V
A
A
A
μs
●
●
●
●
●
●
●
●
●
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
(SCSOA)
non-repetitive
Advantages
P tot
T C = 25°C
140
W
●
space savings
●
reduced protection circuits
Symbol
Conditions
Characteristic Values
●
package designed for wave soldering
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Typical Applications
V CE(sat)
V GE(th)
I C = 30 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 0.7 mA; V GE = V CE
4.5
1.9
2.2
2.4
6.5
V
V
V
●
●
●
AC motor control
AC servo and robot drives
power supplies
I CES
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 30 A
V GE = ±15 V; R G = 33 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 30 A
0.5
50
50
270
40
1.4
1.0
1600
150
0.6
200
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
R thJC
(per IGBT)
0.88 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-4
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