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参数资料
| 型号： | MWI450-17E9 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 540 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-29 |
| 文件页数： | 1/3页 |
| 文件大小： | 289K |
| 代理商： | MWI450-17E9 |
2004 IXYS All rights reserved
1 - 3
416
Advanced Technical Information
MWI 450-17 E9
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 125°C
1700
V
V
GES
± 20
V
I
C25
T
C =
25°C
540
A
I
C60
T
C =
60°C
440
A
I
C80
T
C =
80°C
375
A
RBSOA
R
G = 3.3 ; TVJ = 125°C
I
CM =
750
A
Clamped inductive load; L = 100 H
V
CEK ≤ VCES
t
SC
V
CE = 1000 V; VGE = ±15 V; RG = 3.3 ;10
s
(SCSOA)
T
VJ = 125°C; non-repetitive; VCEmax < VCES
P
tot
T
C = 25°C
2.2
kW
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 450 A; VGE = 15 V; TVJ =
25°C
2.6
3.0
V
T
VJ = 125°C
3.0
3.6
V
V
GE(th)
I
C = 30 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
1 mA
T
VJ = 125°C
9
26 mA
I
GES
V
CE = 0 V; VGE = ± 20 V
1.5
A
t
d(on)
170
ns
t
r
110
ns
t
d(off)
480
ns
t
f
110
ns
E
on
150
mJ
E
off
90
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
33
nF
Q
Gon
V
CE = 900 V; VGE = 15 V; IC = 300 A
2.6
C
R
thJC
0.057 K/W
Inductive load, T
VJ = 125°C
V
CE = 900 V; IC = 450 A
V
GE = ±15 V; RG = 3.3
I
C60
= 440 A
V
CES = 1700 V
V
CE(sat) typ. = 2.5 V
IGBT Modules
Sixpack
Features
NPT3 IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
6
4
2
5
3
1
27
22
17
25
20
15
23
18
13
24
19
14
7/8
9/10
11/12
26
21
16
28
29
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MWI451-17E9 | 功能描述:IGBT 模块 6-PK IGBT MODULE IN E9-PK 1700V 475A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MWI45-12T6K | 功能描述:分立半导体模块 45 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI50-06A7 | 功能描述:分立半导体模块 50 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MWI50-06A7T | 功能描述:IGBT 模块 50 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| MWI50-12A5 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:IGBT Modules Sixpack |
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