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参数资料
| 型号： | MWI60-12T6K |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIXPACK RBSOA 1200V E1 |
| 标准包装： | 10 |
| IGBT 类型： | 沟道 |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.3V @ 15V，35A |
| 电流 - 集电极 (Ic)（最大）： | 58A |
| 电流 - 集电极截止（最大）： | 500µA |
| Vce 时的输入电容 (Cies)： | 2.53nF @ 25V |
| 功率 - 最大： | 200W |
| 输入： | 标准 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E1 |
| 供应商设备封装： | E1 |
MWI 60-12T6K
IGBTs
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 25°C to 50°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
200
±20
±30
58
4
200
Unit
V
V
V
A
A
W
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 35 A; V GE = 5 V
I C = .5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
T VJ = 25°C
4.5
.9
2.2
0.8
2.3
6.5
0.5
V
V
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V CE = 0 V; V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = MHz
V CE = 600 V; V GE = 5 V; I C = 35 A
2530
330
400
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 600 V; I C = 35 A
V GE = ± 5 V; R G = 27 W
T VJ = 25°C
90
50
520
90
3.5
4.8
ns
ns
ns
ns
mJ
mJ
I CM
reverse bias safe operating area
RBSOA; V GE = ± 5 V; R G = 27 W
L = 00 μH; clamped induct. load T VJ = 25°C
V CEmax = V CES - L S · di/dt
70
A
t SC
(SCSOA)
R thJC
R thCH
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
V CE = 900 V; V GE = ± 5 V;
R G = 27 W ; non-repetitive
(per IGBT)
(per IGBT)
T VJ = 25°C
0
0.25
0.62
μs
K/W
K/W
Diodes
Symbol
Definitions
Conditions
Maximum Ratings
V RRM
max. repetitive reverse voltage
600
V
I F25
I F80
forward current
T C = 25°C
T C = 80°C
49
32
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V F
forward voltage
I F = 35 A
T VJ = 25°C
T VJ = 25°C
2.6
.8
2.9
V
V
I RM
t rr
R thJC
R thCH
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
V R = 600 V; I F = 35 A
di F /dt = -600 A/μs
(per diode)
(per diode)
T VJ = 00°C
T VJ = 25°C
35
50
0.3
0.9
A
ns
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
2007 3a
2-4
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