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参数资料
| 型号： | MWI75-06A7 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT SIXPACK RBSOA 600V E2 |
| 标准包装： | 6 |
| IGBT 类型： | NPT |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，75A |
| 电流 - 集电极 (Ic)（最大）： | 90A |
| 电流 - 集电极截止（最大）： | 1.3mA |
| Vce 时的输入电容 (Cies)： | 3.2nF @ 25V |
| 功率 - 最大： | 280W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E2 |
| 供应商设备封装： | E2 |
MWI 75-06 A7
MWI 75-06 A7 T
IGBT Modules
I C25
= 90 A
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
V CES = 600 V
V CE(sat) typ. = 2.1 V
Type
NTC - Option
1
5
9
MWI 75-06 A7
MWI 75-06 A7T
without NTC
with NTC
2
6
10
16
15
T
NTC
14
3
4
7
8
11
12
T
See outline drawing for pin arrangement
E72873
17
IGBTs
Features
●
NPT IGBT technology
Symbol
Conditions
Maximum Ratings
●
low saturation voltage
V CES
V GES
I C25
I C80
RBSOA
t SC
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 18 Ω ; T VJ = 125°C
Clamped inductive load; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 18 Ω ; T VJ = 125°C
600
± 20
90
60
I CM = 120
V CEK ≤ V CES
10
V
V
A
A
A
μs
●
●
●
●
●
●
●
●
●
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
(SCSOA)
non-repetitive
Advantages
P tot
T C = 25°C
280
W
●
space savings
●
reduced protection circuits
Symbol
Conditions
Characteristic Values
●
package designed for wave soldering
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Typical Applications
V CE(sat)
V GE(th)
I C = 75 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 1.5 mA; V GE = V CE
4.5
2.1
2.5
2.6
6.5
V
V
V
●
●
●
AC motor control
AC servo and robot drives
power supplies
I CES
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 75 A
V GE = ±15 V; R G = 18 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 75 A
0.9
50
50
270
40
3.5
2.5
3200
190
1.3
200
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
R thJC
(per IGBT)
0.44 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MWI75-06A7T | 功能描述:IGBT 模块 75 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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| MWI75-12E8 | 功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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