参数资料
型号: MWI75-06A7
厂商: IXYS
文件页数: 2/4页
文件大小: 0K
描述: MOD IGBT SIXPACK RBSOA 600V E2
标准包装: 6
IGBT 类型: NPT
配置: 三相反相器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.6V @ 15V,75A
电流 - 集电极 (Ic)(最大): 90A
电流 - 集电极截止(最大): 1.3mA
Vce 时的输入电容 (Cies): 3.2nF @ 25V
功率 - 最大: 280W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: E2
供应商设备封装: E2
MWI 75-06 A7
MWI 75-06 A7 T
Diodes
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
I F25
I F80
T C = 25°C
T C = 80°C
140
85
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 75 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 60 A; di F /dt = -500 A/μs; T VJ = 125°C
V R = 300 V; V GE = 0 V
1.8
1.3
28
100
2.1
V
V
A
ns
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 0.95 V; R 0 = 20 m Ω
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.014 V; R 0 = 4 m Ω
R thJC
(per diode)
0.61 K/W
Thermal Response
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
Characteristic Values
min. typ. max.
R 25
B 25/50
T = 25°C
4.75
5.0
3375
5.25 k Ω
K
IGBT (typ.)
C th1 = 0.248 J/K; R th1 = 0.343 K/W
Module
C th2 = 1.849 J/K; R th2 = 0.097 K/W
Free Wheeling Diode (typ.)
Symbol
Conditions
Maximum Ratings
C th1 = 0.23 J/K; R th1 = 0.483 K/W
T VJ
T stg
-40...+150
-40...+125
° C
° C
C th2 = 1.3 J/K; R th2 = 0.127 K/W
V ISOL
M d
I ISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
2500
2.7 - 3.3
V~
Nm
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
min. typ. max.
R pin-chip
5
m Ω
d S
d A
R thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
0.02
180
mm
mm
K/W
g
Higher magnification on page B3 - 72
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
2-4
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