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参数资料
| 型号： | MWT-170 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封装： | HERMETIC SEALED PACKAGE-4 |
| 文件页数： | 2/2页 |
| 文件大小： | 101K |
| 代理商： | MWT-170 |
MwT-1
12 GHz High Gain
GaAs FET
MwT-1
12 GHz High Gain
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75
°°°°°C or Lower
125
75
°°°°°C or Lower
125
150
0
2
4
6
8
300.0
200.0
100.0
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
200
+175
300
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-1
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
18 Mils Long
15 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
5x 33x 5 Mils
(1 each)
FP1
MwT-1
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP1
FREQUENCY
GHz
NF MIN
dB
GAMMA OPT
MAG ANGLE
Rn/50
1.00
2.00
4.00
6.00
8.00
12.00
0.45
0.65
0.95
1.25
1.52
1.88
0.885
0.722
0.591
0.61
0.656
0.733
32
61
110
139
157
176
1.27
0.5
0.24
0.17
0.14
0.11
TYPICAL NOISE PARAMETERS
MwT-1LN Chip: VDS= 3.0V IDS= 30mA
NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY
2.0
MAXIMUM RATINGS AT Ta = 25
°°°°°C
1.5
1.0
0.5
12
4
6
8
12
20
20.0
15.0
10.0
5.0
0.0
Associated
Gain
(dB)
NFopt
(dB)
IDSS
(mA)
BIN#
1
2
3
60-
70
70-
80
80-
90
45
6
90-
100
100-
110
110-
120
78
9
120-
130
130-
140
140-
150
10
11
12
150-
160
160-
170
170-
180
13
14
15
180-
190
190-
200
200-
210
16
210-
220
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
Frequency (GHz)
3
BIN ACCURACY STATEMENT
400.0
17
220-
230
18
230-
240
100
7 Mils Long
Required for
Self-Bias with
Source Cap Actions
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