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参数资料
| 型号： | MWT-1789HL |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 126K |
| 代理商： | MWT-1789HL |
MwT-1789HL
DC-4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
Features:
Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
o
45 dBm IP3
o
70 dBc ACPR
o
28 dBm P1dB
o
14 dB SSG @ 2000 MHz
MTTF > 100 years @ channel temperature 150C
Lead Free RoHS Compliant Surface-Mount SOT-89 Package
Description:
The MwT-1789HL is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver
and Power Amplifier applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA,
CDMA, Edge, cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also idea for high data rate wireless LAN
infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In
additional, the product can be used for point-to-point microwave communications links. The third order intercept performance of the
MwT-1789HL is excellent, typically 18 dB above the 1 dB power gain compression point. The chip is produced using MwT's
proprietary high linearity device design. It also uses MwT reliable metallization process. All chips are passivated using MwT's
patented "Diamond-Like Carbon" process for increased durability.
Electrical Specifications(1): @ Vds=6.5V, Ids=200mA, Ta=25 °C
Parameter
Units
Typical Data
Test Frequency
MHz
900
1950
2500
3500
Gain
dB
18
14
11
10
Input Return Loss
dB
10
9
Output Return Loss
dB
10
8
9
Output P1dB
dBm
28.5
28
Output IP3
dBm
45
Noise Figure
(2)
dB
3
4
1.
RF data is taken from an application circuit. See application notes for details of RF performance and configuration of application circuit.
2.
Noise Figure is taken at Ids=100mA.
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