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参数资料
型号： MWT-1789HL
厂商： MICROWAVE TECHNOLOGY INC
元件分类： 功率晶体管
英文描述： S BAND, GaAs, N-CHANNEL, RF POWER, MESFET
封装： ROHS COMPLIANT, SURFACE MOUNT, 4 PIN
文件页数： 3/3页
文件大小： 126K
代理商： MWT-1789HL
MwT-1789HL
DC-4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
Typical Scattering Parameters:
(Vds=6.5V, Ids=200mA, Ta =25
°C Reference Planes at Leads)
F [GHz]
S11
S21
S12
S22
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.250
0.883 -62.592
13.372 145.807
0.030 54.281
0.199 -61.148
0.500
0.822 -101.770
9.977 124.388
0.042 42.491
0.205 -99.716
0.750
0.788 -125.905
7.610 111.294
0.049 36.904
0.207 -120.156
1.000
0.772 -141.758
6.104 102.405
0.051 35.628
0.207 -132.755
1.250
0.765 -153.729
5.130
95.579
0.056 35.655
0.205 -141.214
1.500
0.762 -163.638
4.378
88.965
0.056 35.370
0.201 -149.045
1.750
0.762 -172.772
3.909
84.423
0.060 38.592
0.198 -156.773
2.000
0.760
178.628
3.503
77.228
0.063 35.009
0.196 -165.448
2.250
0.761
170.294
3.103
72.602
0.063 38.580
0.201 -175.051
2.500
0.765
162.141
2.867
67.380
0.067 37.582
0.210
174.935
2.750
0.768
154.540
2.561
61.985
0.067 38.516
0.224
165.112
3.000
0.772
147.101
2.384
57.569
0.068 38.547
0.238
156.386
3.250
0.779
140.309
2.140
51.937
0.069 41.708
0.257
148.369
3.500
0.781
133.919
1.966
49.164
0.072 41.931
0.276
141.018
3.750
0.781
128.561
1.859
45.298
0.072 42.125
0.295
134.092
4.000
0.782
123.650
1.687
40.539
0.075 45.268
0.313
128.716
4.250
0.788
119.391
1.576
38.185
0.072 45.630
0.332
125.490
4.500
0.792
114.854
1.477
35.447
0.080 51.701
0.358
122.346
4.750
0.796
110.082
1.413
30.992
0.086 49.126
0.378
118.908
5.000
0.795
105.529
1.291
28.392
0.088 51.114
0.394
114.941
5.250
0.792
100.361
1.271
24.881
0.096 49.424
0.403
110.320
5.500
0.796
95.934
1.170
19.496
0.096 45.481
0.410
104.083
5.750
0.799
90.277
1.125
18.186
0.105 48.822
0.426
98.804
6.000
0.804
84.180
1.088
13.075
0.112 46.367
0.446
91.560
Absolute Maximum Ratings
: (Ta= 25 °C)*
SYMBOL
PARAMETERS
UNITS
ABSOLUTE MAXIMUM
Vds
Drain-Source Voltage
V
8
Vgs
Gate-Source Voltage
V
-6 to +0.8
Ids
Drain Current
mA
400
Igs
Gate Current
mA
3
Pdiss
DC Power Dissipation
W
2.5
Pin max
RF Input Power
dBm
+28
Tch
Channel Temperature
C
150
Tstg
Storage Temperature
C
-60 to 150
*Operation of this device above any one of these parameters may cause permanent damage.
相关PDF资料
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MWT-1789SB S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
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