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参数资料
| 型号： | MWT-22Q4 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | 4 X 4 MM, QFN-16 |
| 文件页数： | 2/6页 |
| 文件大小： | 168K |
| 代理商： | MWT-22Q4 |
MwT-22Q4
High Power, High Linearity Packaged FET
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
DC Specifications (Ta = 25C)
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
mA
800
1200
Gm
Transconductance
Vds=2.5 V Vgs=0.0 V
mS
500
650
Vp
Pinch-off Voltage
Vds=3.0 V Ids=30 mA
V
-1.2
-5.0
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -5.0 mA
V
-8.0
-12.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -5.0 mA
V
-12.0
-14.0
Rth
Thermal Resistance
°C/W
16
Outline Diagram
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