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参数资料
| 型号： | MWT-22Q4 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封装： | 4 X 4 MM, QFN-16 |
| 文件页数： | 3/6页 |
| 文件大小： | 168K |
| 代理商： | MWT-22Q4 |
MwT-22Q4
High Power, High Linearity Packaged FET
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Absolute Maximum Rating (Ta= 25
°C)*
SYMBOL
PARAMETERS
UNITS
ABSOLUTE MAXIMUM
Vds
Drain-Source Voltage
V
9
Vgs
Gate-Source Voltage
V
-6 to +0.8
Ids
Drain Current
mA
800
Igs
Gate Current
mA
5
Pdiss
DC Power Dissipation
W
6
Pin max
RF Input Power
dBm
+28
Tch
Channel Temperature
C
150
Tstg
Storage Temperature
C
-65 to 150
*Operation of this device above any one of these parameters may cause permanent damage.
Application Circuits
Typical RF Performance(2)
Vds=7.5V, Ids=560mA, Ta=25°C
Parameter
Units
Typical Data
Test Frequency
MHz
870-960
2110-2170
2400-2600
3400-3600
Gain
dB
19
16
15
12
Input Return Loss
dB
-12
-11
-10
Output Return Loss
dB
-5
-6
-7
-6
P1dB
dB
33
32
Output IP3
dBm
44
46
45
Noise Figure
dB
2.7
2.9
3.0
3.8
2. See Circuit Schematic for details of matching circuits.
Typical Scattering Parameters:
(Vds=7.5V, Ids=550mA, Ta =25°C Reference Planes at Leads)
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