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参数资料
| 型号： | MWT-A989SB |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 4 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 218K |
| 代理商： | MWT-A989SB |
MwT-A989SB
0.5-4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
DC Specifications: (Ta = 25C)
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=3.0 V Vgs=0.0 V
mA
100
200
IDS
Drain-to-Source Current
Vdd=4.5V
mA
50
150
Gm
Transconductance
Vds=2.0 V Vgs=0.0 V
mS
90
120
Vgs
Gate-to-Source Voltage
Vdd=4.5 V
V
-0.5
Vp
Pinch-off Voltage
Vds=3.0 V Ids=5.0 mA
V
-2.5
-5.0
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -1.0 mA
V
-5.0
-10.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -1.0 mA
V
-6.0
-10.0
Rth
Thermal Resistance
°C/W
75
IP3 vs Ids
(Vdd=6.5V, Freq=1.9GHz)
26
28
30
32
34
36
38
40
42
44
46
25
50
75
100
125
150
175
Ids (mA)
IP3
(d
Bm)
NF vs Ids
(Vdd=4.5V, Freq=1.9GHz)
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
25
50
75
100
125
150
175
Ids (mA)
NF
(dB)
SOT-89 Outline Diagram
1: Gate; 2,4: Source; 3: Drain
Dimensions in mm/inch
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