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参数资料
| 型号： | MWT-PH16A |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 文件页数： | 2/3页 |
| 文件大小： | 72K |
| 代理商： | MWT-PH16A |
MwT-PH16A
20 GHz Power AlGaAs/InGaAs PHEMT
Preliminary Data Sheet
June 2007
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2007
Page 2 of 3, Revised June 2007
DC Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=2.0 V Vgs=0.0 V
mA
300
600
Gm
Transconductance
Vds=2.0 V Vgs=0.0 V
mS
300
400
Vp
Pinch-off Voltage
Vds=3.0 V Ids=2.0 mA
V
-1.2
-2.5
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -2.0 mA
V
-6.0
-8.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -2.0 mA
V
-10.0
-13.0
Rth
Thermal Resistance
°C/W
30
* Overall Rth depends on case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER
VALUE
Source Resistance
Rs
0.13
ohm
Source Inductance
Ls
0.025
nH
Drain-Source Resistance
Rds
40
ohm
Drain-Source Capacitance
Cds
0.25
pF
Drain Resistance
Rd
0.3
ohm
Drain Pad Capacitance
Cpd
0.027
pF
Drain Inductance
Ld
0.1
nH
Gate Bond Wire Inductance
Lg
0.1
nH
Gate Pad Capacitance
Cpg
0.050
pF
Gate Resistance
Rg
0.20
ohm
Gate-Source Capacitance
Cgs
2.50
pF
Channel Resistance
Ri
0.30
ohm
Gate-Drain Capacitance
Cgd
0.10
pF
Transconductance
gm
400.0
mS
Transit Time
tau
3.0
psec
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