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参数资料
| 型号： | MWT-PH16A |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 文件页数： | 3/3页 |
| 文件大小： | 72K |
| 代理商： | MWT-PH16A |
MwT-PH16A
20 GHz Power AlGaAs/InGaAs PHEMT
Preliminary Data Sheet
June 2007
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2007
Page 3 of 3, Revised June 2007
MAXIMUM RATINGS AT Ta = 25
°C
Symbol
Parameter
Units
Cont
Max1
Absolute
Max2
VDS
Drain to Source Volt.age
V
8.5
9.0
Tch
Channel Temperature
°C
+150
+175
Tst
Storage Temperature
°C
-65 to+150
+175
Pin
RF Input Power
mW
800
1000
Pt
Total Power Dissipation
mW
2000
2400
Notes:
1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2. Exceeding any one of these limits may cause permanent damage.
BIN SELECTION
BIN#
1
2
3
4
5
6
IDSS
(mA)
300-
350
350-
400
400-
450
450-
500
500-
550
550-
600
BIN ACCURACY STATEMENT: Due to the effects of temperature, dc loading and probe tip varnishing, the IDSS from the “on wafer” probing of any MwT
device may differ After it has been attached to a proper heat sink and tested in an RF or DC circuit. Because of the aforementioned effects, the IDSS
distribution may deviate as much as +/- 1 bin within the range identified on the label of Each die shipping container, and +/- 2 bins within the selected range.
ORDERING INFORMATION:
CHIP – Model Number MwT-PH16A
When placing order or inquiring, please specify BIN range, wafer number, if known, and visual screening level required. For details of BIN Selection and Safe
Handling Procedure please see supplementary information in available PDF on our website www.mwtinc.com. Contact factory for availability of packages.
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