参数资料
型号: MWT-S771
厂商: MICROWAVE TECHNOLOGY INC
元件分类: 小信号晶体管
英文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
封装: HERMETIC SEALED PACKAGE-2
文件页数: 2/2页
文件大小: 98K
代理商: MWT-S771
MwT-S7
18 GHz High Gain, Low Noise
GaAs FET
MwT-S7
18 GHz High Gain, Low Noise
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75
°°°°°C
or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
150.0
100.0
50.0
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
50
+175
75
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-S7
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 Mils
(2 each)
FP7
MwT-S7
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP7
FREQUENCY
GHz
NF MIN
dB
GAMMA OPT
MAG ANGLE
Rn/50
2.00
4.00
8.00
12.00
16.00
18.00
0.29
0.56
1.06
1.5
1.89
2.1
0.68
0.49
0.41
0.49
0.55
0.58
27
57
114
149
168
175
0.188
0.182
0.165
0.152
0.143
0.14
TYPICAL NOISE PARAMETERS
MwT-S7LN Chip: VDS= 3.0V IDS= 5.0 mA
NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY
2.0
MAXIMUM RATINGS AT Ta = 25
°°°°°C
1.5
1.0
0.5
12
4
6
8
12
20
20.0
15.0
10.0
5.0
0.0
Associated
Gain
(dB)
NFopt
(dB)
IDSS
(mA)
BIN#
1
2
3
26-
30
30-
34
34-
38
45
6
38-
42
42-
46
46-
50
78
9
50-
54
54-
58
58-
62
10
11
12
62-
66
66-
70
70-
74
13
14
15
74-
78
78-
82
82-
86
16
17
18
86-
90
90-
94
94-
98
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
Frequency (GHz)
3
BIN ACCURACY STATEMENT
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