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参数资料
| 型号： | MZP4749ATA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 封装： | PLASTIC, CASE 59-10, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 129K |
| 代理商： | MZP4749ATA |
MZP4729A Series
http://onsemi.com
4
t, TIME (SECONDS)
0.0001 0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.3
0.5
0.7
1
2
3
5
7
10
20
30
D =0.5
0.2
0.1
0.05
0.01
D = 0
DUTY CYCLE, D =t1/t2
θ JL
(t,
D)
TRANSIENT
THERMAL
RESIST
ANCE
JUNCTION-T
O-LEAD
(
C/W)°
PPK
t1
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE ΔTJL = θJL (t)PPK
REPETITIVE PULSES ΔTJL = θJL (t,D)PPK
t2
0.02
10
20
30
50
100
200
300
500
1K
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 50
100
PW, PULSE WIDTH (ms)
P
,PEAK
SURGE
POWER
(W
ATTS)
PK
1
2
5
10
20
50
100
200
400
1000
0.0003
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
TA = 125°C
NOMINAL VZ (VOLTS)
AS
SPECIFIED
IN
ELEC.
CHAR.
TABLE
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
I R
,REVERSE
LEAKAGE
(μ
Adc)
@
V
R
RECTANGULAR
NONREPETITIVE
WAVEFORM
TJ =25°C PRIOR
TO INITIAL PULSE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MZP4749ATAG | 功能描述:稳压二极管 24V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MZP4750 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.0 WATT SURMETIC 30 SILICON ZENER DIODES |
| MZP4750A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3 Watt DO-41 Surmetic 30 Zener Voltage Regulators |
| MZP4750AG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3 Watt DO-41 Surmetic 30 Zener Voltage Regulators |
| MZP4750ARL | 功能描述:稳压二极管 27V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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