- 您现在的位置：买卖IC网 > PDF目录80717 > MZP4749ATA (ON SEMICONDUCTOR) 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 PDF资料下载
参数资料
| 型号： | MZP4749ATA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 封装： | PLASTIC, CASE 59-10, 2 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 129K |
| 代理商： | MZP4749ATA |
MZP4729A Series
http://onsemi.com
5
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally
3040°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + ΔTJL
ΔTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
ΔTJL = θJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (ΔTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
ΔV = θVZ ΔTJ
θVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ4704/E8 | 17 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ4693/D3 | 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MP02G260-14 | 267 A, 1400 V, SILICON, RECTIFIER DIODE |
| MP02HB280-18 | 280 A, 1800 V, SILICON, RECTIFIER DIODE |
| MAZ80430L | 4.1 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MZP4749ATAG | 功能描述:稳压二极管 24V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| MZP4750 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.0 WATT SURMETIC 30 SILICON ZENER DIODES |
| MZP4750A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3 Watt DO-41 Surmetic 30 Zener Voltage Regulators |
| MZP4750AG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:3 Watt DO-41 Surmetic 30 Zener Voltage Regulators |
| MZP4750ARL | 功能描述:稳压二极管 27V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。