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参数资料
| 型号： | N01L63W2AB25I |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM ASYNC 1MBIT ULP 48-BGA |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 480 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (64K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-BGA（6x8） |
| 包装： | 托盘 |
N01L63W2A
Power Savings with Page Mode Operation (WE = V IH )
Page Address (A4 - A15)
Open page
Word Address (A0 - A3)
Word 1
Word 2
Word 16
CE1
CE2
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Rev. 9 | Page 4 of 10 | www.onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N01L63W2AB25IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit |
| N01L63W2AB5I | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit |
| N01L63W2AB5IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit |
| N01L63W2AT25I | 功能描述:静态随机存取存储器 1MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N01L63W2AT25IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit |
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