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参数资料
| 型号： | N01L63W3AB25I |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 3V LP 48-BGA |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 480 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (64K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-BGA（6x8） |
| 包装： | 托盘 |
N01L63W3A
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A15
Page
Address
Decode
Logic
4K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE
W E
OE
U B
Control
Logic
LB
Functional Description
L
L
CE
H
L
L
L
L
WE
X
X
L
H
H
OE
X
X
X 3
L
H
UB
X
H
1
L 1
L 1
LB
X
H
1
L 1
L 1
I/O 0 - I/O 151
High Z
High Z
Data In
Data Out
High Z
MODE
Standby 2
Active
Write 3
Read
Active
POWER
Standby
Active
Active
Active
Active
1. When UB and LB are in select mode (low), I/O 0 - I/O 15 are affected as shown. When LB only is in the select mode only I/O 0 - I/O 7
are affected as shown. When UB is in the select mode only I/O 8 - I/O 15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance 1
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
V IN = 0V, f = 1 MHz, T A = 25 o C
V IN = 0V, f = 1 MHz, T A = 25 o C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Rev. 9 | Page 2 of 10 | www.onsemi.com
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相关代理商/技术参数 |
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|---|---|
| N01L63W3AB25IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ?? 16 bit |
| N01L63W3AB5I | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ?? 16 bit |
| N01L63W3AB5IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit |
| N01L63W3AT25I | 功能描述:静态随机存取存储器 1MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N01L63W3AT25IT | 功能描述:静态随机存取存储器 1MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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