参数资料
型号: N01L83W2AT25I
厂商: ON Semiconductor
文件页数: 2/10页
文件大小: 0K
描述: IC SRAM 1MBIT 70NS 32TSOP
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 156
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 1M (128K x 8)
速度: 70ns
接口: 并联
电源电压: 2.3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 32-LFSOP(0.724",18.40mm 宽)
供应商设备封装: 32-TSOP I
包装: 托盘
其它名称: 766-1033
N01L83W2A
Functional Block Diagram
Address
Inputs
A 0 - A 3
Word
Address
Decode
Logic
Address
Inputs
A 4 - A 16
Page
Address
Decode
Logic
8K Page
x 16 word
x 8 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O 0 - I/O 7
CE1
CE2
W E
Control
Logic
OE
Functional Description
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
L
H
H
OE
X
X
X 2
L
H
I/O 0 - I/O 7
High Z
High Z
Data In
Data Out
High Z
MODE
Standby 1
Standby 1
Write 2
Read
Active
POWER
Standby
Standby
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance 1
Item
Input Capacitance
Symbol
C IN
Test Condition
V IN = 0V, f = 1 MHz, T A = 25 o C
Min
Max
8
Unit
pF
I/O Capacitance
C I/O
V IN = 0V, f = 1 MHz, T A =
25 o C
8
pF
1. These parameters are verified in device characterization and are not 100% tested
Rev. 10 | Page 2 of 10 | www.onsemi.com
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