- 您现在的位置：买卖IC网 > PDF目录299527 > N02L63W2AB5I (ON SEMICONDUCTOR) 128K X 16 STANDARD SRAM, 70 ns, PBGA48 PDF资料下载
参数资料
| 型号： | N02L63W2AB5I |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封装： | 6 X 8 MM, BGA-48 |
| 文件页数： | 1/11页 |
| 文件大小： | 654K |
| 代理商： | N02L63W2AB5I |
N02L63W2A
2008 SCILLC. All rights reserved.
Publication Order Number:
July 2008 - Rev.
9
N02L63W2A/D
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
Overview
The N02L63W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L63W2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
Single Wide Power Supply Range
2.3 to 3.6 Volts
Very low standby current
2.0A at 3.0V (Typical)
Very low operating current
2.0mA at 3.0V and 1s (Typical)
Very low Page Mode operating current
0.8mA at 3.0V and 1s (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.8V
Very fast output enable access time
30ns OE access time
Automatic power down to standby mode
TTL compatible three-state output driver
Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Current
(ISB), Typical
Operating
Current (Icc),
Typical
N02L63W2AB
48 - BGA
-40oC to +85oC 2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2
A2 mA @ 1MHz
N02L63W2AT
44 - TSOP II
N02L63W2AB2
48 - BGA Green
N02L63W2AT2
44 - TSOP II Green
相关PDF资料 |
PDF描述 |
|---|---|
| N336A0 | 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS |
| N336A1 | 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS |
| N336AD | 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS |
| N336AF | 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS |
| N336AN | 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| N02L63W2AB5IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit |
| N02L63W2AT25I | 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N02L63W2AT25IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit |
| N02L63W2AT5I | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ?? 16 bit |
| N02L63W2AT5IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit |
发布紧急采购，3分钟左右您将得到回复。