参数资料
型号: N02L63W2AB5I
厂商: ON SEMICONDUCTOR
元件分类: SRAM
英文描述: 128K X 16 STANDARD SRAM, 70 ns, PBGA48
封装: 6 X 8 MM, BGA-48
文件页数: 5/11页
文件大小: 654K
代理商: N02L63W2AB5I
Rev.
9 | Page 3 of 11 | www.onsemi.com
N02L63W2A
Functional Block Diagram
Functional Description
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O151
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
MODE
POWER
H
X
XX
High Z
Standby2
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
Standby
X
L
XX
High Z
Standby2
Standby
L
H
X
H
High Z
Standby
LHL
X3
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
L1
Data In
Write3
Active
LH
HL
L1
Data Out
Read
Active
LH
H
L1
High Z
Active
Capacitance1
1. These parameters are verified in device characterization and are not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
CIN
VIN = 0V, f = 1 MHz, TA = 25oC
8pF
I/O Capacitance
CI/O
VIN = 0V, f = 1 MHz, TA = 25oC
8pF
Address
Inputs
A0 - A3
Address
Inputs
A4 - A16
Word
Address
Decode
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Wo
rd
M
ux
Input/
Output
Mux
and
Buffers
Page
Address
Decode
Logic
Control
Logic
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O7
I/O8 - I/O15
相关PDF资料
PDF描述
N336A0 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS
N336A1 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS
N336AD 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS
N336AF 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS
N336AN 2000 MHz - 8000 MHz RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH, 1.9 dB INSERTION LOSS
相关代理商/技术参数
参数描述
N02L63W2AB5IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
N02L63W2AT25I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L63W2AT25IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
N02L63W2AT5I 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ?? 16 bit
N02L63W2AT5IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit