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| 型号： | N08L6182AB27I |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 8MBIT 1.8V LP 48-BGA |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 220 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 8M（512K x 16） |
| 速度： | 85ns |
| 接口： | 并联 |
| 电源电压： | 1.65 V ~ 2.2 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-BGA（6x8） |
| 包装： | 托盘 |
N08L6182A
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE1
CE2
WE
OE
Control
Logic
UB
LB
Functional Description
Standby
CE1
H
X
X
CE2
X
L
X
WE
X
X
X
OE
X
X
X
UB
X
X
H
LB
X
X
H
I/O 0 - I/O 151
High Z
High Z
High Z
MODE
Standby 2
2
Standby 2
POWER
Standby
Standby
Standby
L
L
H
L
X 3
1
L
1
Data In
Write 3
Active -> Standby 4
L
L
H
H
H
H
L
H
L 1
L 1
L 1
L 1
Data Out
High Z
Read
Active
Active -> Standby 4
Standby 4
1. When UB and LB are in select mode (low), I/O 0 - I/O 15 are affected as shown. When LB only is in the select mode only I/O 0 - I/O 7
are affected as shown. When UB is in the select mode only I/O 8 - I/O 15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from
any expernal influence.
Capacitance 1
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
V IN = 0V, f = 1 MHz, T A = 25 o C
V IN = 0V, f = 1 MHz, T A = 25 o C
Min
Max
8
8
Unit
pF
pF
1. These parameters are verified in device characterization and are not 100% tested
Rev. 8 | Page 2 of 10 | www.onsemi.com
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相关代理商/技术参数 |
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| N08L6182AB27IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit |
| N08L6182AB7I | 功能描述:静态随机存取存储器 8MB 1.8V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N08L6182AB7IT | 功能描述:静态随机存取存储器 8MB 1.8V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N08L63W2A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit |
| N08L63W2AB27I | 功能描述:静态随机存取存储器 8MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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