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参数资料
| 型号： | N08M1618L1AB-85I |
| 元件分类： | SRAM |
| 英文描述： | 512K X 16 STANDARD SRAM, 85 ns, PBGA48 |
| 封装： | BGA-48 |
| 文件页数： | 1/11页 |
| 文件大小： | 194K |
| 代理商： | N08M1618L1AB-85I |
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
N08M1618L1A
Advance Information
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512K × 16 bit
Overview
The N08M1618L1A is an integrated memory
device intended for non life-support medical
applications. This device is a 8 megabit memory
organized as 524,288 words by 16 bits. The device
is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology with
reliability inhancements for medical users. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. This device is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package.
Features
Dual voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.4 to 2.2 Volts
Very low standby current
0.5A at 1.8V and 37 deg C
Very low operating current
1.0mA at 1.8V and 1s (Typical)
Very low Page Mode operating current
0.5mA at 1.8V and 1s (Typical)
Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Low voltage data retention
Vcc = 1.2V
Special Processing to reduce Soft Error Rate
(SER)
Automatic power down to standby mode
Pin Configuration
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
Speed
Standby
Current (ISB),
Max
Operating
Current (Icc),
Max
N08M1618L1AB
48 - BGA
-40oC to +85oC
2.3V-3.6V(VCCQ)
1.4V-2.2V(VCC)
85ns @ 1.7V
150ns @ 1.4V
20
A
2.5 mA @
1MHz
N08M1618L1AW
Wafer
12
34
56
A
LB
OE
A0
A1
A2
CE2
B I/O8 UB
A3
A4
CE1
I/O0
C I/O9 I/O10 A5
A6
I/O1
I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9
A10
A11
NC
48 Pin BGA (top)
8 x 10 mm
Pin Descriptions
Pin Name
Pin Function
A0-A18
Address Inputs
WE
Write Enable Input
CE1, CE2
Chip Enable Input
OE
Output Enable Input
LB
Lower Byte Enable Input
UB
Upper Byte Enable Input
I/O0-I/O15
Data Inputs/Outputs
VCC
Power
VSS
Ground
VCCQ
Power I/O pins only
NC
Not Connected
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N08M1618L1AW | 制造商:AMI 制造商全称:AMI 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit |
| N08M163WL1A | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit |
| N08M163WL1AB | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit |
| N08M163WL1AB-70I | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit |
| N08M163WL1AD | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit |
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