参数资料
型号: N25S818HAS21I
厂商: ON Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: IC SRAM 256KBIT 16MHZ 8SOIC
标准包装: 100
格式 - 存储器: RAM
存储器类型: SRAM
存储容量: 256K (32K x 8)
速度: 16MHz
接口: SPI 串行
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 托盘
产品目录页面: 1131 (CN2011-ZH PDF)
其它名称: 766-1041
N25S818HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V SS
Voltage on V CC Supply Relative to V SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V IN,OUT
V CC
P D
T STG
T A
T SOLDER
Rating
–0.3 to V CC + 0.3
–0.3 to 4.5
500
–40 to 125
? 40 to +85
260 ° C, 10 sec
Unit
V
V
mW
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Typ
Item
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V CC
V IH
V IL
Test Conditions
1.8 V Device
Min
1.7
0.7 x V CC
? 0.3
(Note 1)
Max
1.95
V CC + 0.3
0.8
Unit
V
V
V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Current
V OH
V OL
I LI
I LO
I CC1
I CC2
I CC3
I OH = ? 0.4 mA
I OL = 1 mA
CS = V CC , V IN = 0 to V CC
CS = V CC , V OUT = 0 to V CC
F = 1 MHz, I OUT = 0
F = 10 MHz, I OUT = 0
F = fCLK MAX, I OUT = 0
V CC – 0.5
0.2
0.5
0.5
3
6
10
V
V
m A
m A
mA
mA
mA
Standby Current
I SB
CS = V CC , V IN = V SS or V CC
200
500
nA
1. Typical values are measured at Vcc = Vcc Typ., T A = 25 ° C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
V IN = 0 V, f = 1 MHz, T A = 25 ° C
V IN = 0 V, f = 1 MHz, T A = 25 ° C
Min
Max
7
7
Unit
pF
pF
2. These parameters are verified in device characterization and are not 100% tested
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