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参数资料
| 型号： | N25S818HAS21I |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 16MHZ 8SOIC |
| 标准包装： | 100 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 16MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 托盘 |
| 产品目录页面： | 1131 (CN2011-ZH PDF) |
| 其它名称： | 766-1041 |
N25S818HA
SI
SO
16 ? bit address
Page address (X)
Word address (Y)
Data Words: sequential, at the end of the page the
address wraps back to the beginning of the page
Page X
Word Y
Page X
Word Y+1
Page X
Word Y+2
Page X
Word 31
Page X
Word 0
Page X
Word 1
Figure 8. Page READ Sequence
SI
SO
16 ? bit address
Page address (X)
Word address (Y)
Data Words: sequential, at the end of the page the address wraps to the beginning
of the page and continues incrementing up to the starting word address. At that
time, the address increments to the next page and the burst continues.
... ...
Page X
Page X
Page X
Page X
Page X
Page X
Page X+1 Page X+1
Word Y
Word Y+1
Word 31
Word 0
Word 1
Word Y ? 1 Word Y
Word Y+1
Figure 9. Burst READ Sequence
WRITE Operations
The serial SRAM WRITE is selected by enabling CS low.
First, the 8 ? bit WRITE instruction is transmitted to the
device followed by the 16 ? bit address with the MSB being
a don’t care. After the WRITE instruction and addresses are
sent, the data to be stored in memory is shifted in on the SI
pin.
If operating in page mode, after the initial word of data is
shifted in, additional data words can be written as long as the
address requested is sequential on the same page. Simply
write the data on SI pin and continue to provide clock pulses.
The internal address pointer is automatically incremented to
the next higher address on the page after each word of data
is written in. This can be continued for the entire page length
of 32 words long. At the end of the page, the addresses
pointer will be wrapped to the 0 word address within the
CS
page and the operation can be continuously looped over the
32 words of the same page. The new data will replace data
already stored in the memory locations.
If operating in burst mode, after the initial word of data is
shifted in, additional data words can be written to the next
sequential memory locations by continuing to provide clock
pulses. The internal address pointer is automatically
incremented to the next higher address after each word of
data is read out. This can be continued for the entire array
and when the highest address is reached (7FFFh), the
address counter wraps to the address 0000h. This allows the
burst write cycle to be continued indefinitely. Again, the new
data will replace data already stored in the memory
locations.
All WRITE operations are terminated by pulling CS high.
0
1
2
3
4
5
6
7
8
9
10
11
21
22
23
24
25
26
27
28
29
30
31
SCK
Instruction
16 ? bit address
Data In
SI
0
0
0
0
0
0
1
0
15
14
13
12 ...
2
1
0
7
6
5
4
3
2
1
0
SO
High ? Z
Figure 10. Word WRITE Sequence
http://onsemi.com
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N25S818HAS21IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:256Kb Low Power Serial SRAMs 32K × 8 bit Organization |
| N25S818HAT21I | 功能描述:静态随机存取存储器 256KB 1.8V SERIAL 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N25S818HAT21IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:256Kb Low Power Serial SRAMs 32K × 8 bit Organization |
| N25S830HA | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:256Kb Low Power Serial SRAMs 32K × 8 bit Organization |
| N25S830HAS22I | 功能描述:静态随机存取存储器 256KB 3V SERIAL 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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