参数资料
| 型号： | N74F579N,602 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC COUNTER 8BIT BINARY 20DIP |
| 标准包装： | 720 |
| 系列： | 74F |
| 逻辑类型： | 二进制计数器 |
| 方向： | 上，下 |
| 元件数： | 1 |
| 每个元件的位元数： | 8 |
| 复位： | 异步 |
| 计时： | 同步 |
| 计数速率： | 115MHz |
| 触发器类型： | 正边沿 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 20-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 20-DIP |
| 包装： | 管件 |
| 其它名称： | 933781130602 N74F579N N74F579N-ND |
Philips Semiconductors
Product specification
74F579
8-bit bidirectional binary counter (3-State)
2000 Dec 18
6
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST CONDITIONS1
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS1
MIN
TYP2
MAX
UNIT
TC
VCC = MIN,
V
MAX
IO =1 mA
±10%VCC
2.5
V
VO
High level output voltage
TC
VIL = MAX,
VIH = MIN
IOH = –1 mA
±5%VCC
2.7
3.4
V
VOH
High-level output voltage
I/O
IH
(VIL = 0.0 V,
VIH =45V
IO =3 mA
±10%VCC
2.4
3.3
V
I/On
VIH = 4.5 V
for MR, CP inputs)
IOH = –3 mA
±5%VCC
2.7
3.3
V
VO
Low level output voltage
VCC = MIN,
V
MAX
IO = MAX
±10%VCC
0.35
0.50
V
VOL
Low-level output voltage
VIL = MAX,
VIH = MIN
IOL = MAX,
±5%VCC
0.35
0.50
V
VIK
Input clamp voltage
VCC = MIN, II = IIK
–0.73
–1.2
V
I
Input current
I/On
VCC = MAX, VI = 5.5 V
1
mA
II
at maximum input voltage
others
VCC = MAX, VI = 7.0 V
100
A
IIH
High-level input current
except
VCC = MAX, VI = 2.7 V
20
A
IIL
Low-level input current
I/On
VCC = MAX, VI = 0.5 V
–0.6
mA
IOZH+ IIH
Off-state output current
High-level voltage applied
I/O
VCC = MAX, VO = 2.7 V
70
A
IOZL+ IIL
Off-state output current
Low-level voltage applied
I/On
VCC = MAX, VO = 0.5 V
–600
A
IOS
Short-circuit output current3
VCC = MAX
–60
–150
mA
ICCH
95
135
mA
ICC
Supply current (total)
ICCL
VCC = MAX
105
145
mA
ICCZ
105
150
mA
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under Recommended Operating Conditions for the applicable
type.
2. All typical values are at VCC = 5 V, Tamb = 25 °C.
3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter test, IOS tests should be performed last.
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