参数资料
型号: NAND02GW3B3BZB1F
厂商: NUMONYX
元件分类: PROM
英文描述: 256M X 8 FLASH 3V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
文件页数: 37/59页
文件大小: 998K
代理商: NAND02GW3B3BZB1F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
42/59
Table 23. DC Characteristics, 3V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
10
20
mA
IDD2
Program
-
10
20
mA
IDD3
Erase
-
10
20
mA
IDD4
Standby current (TTL)
E=VIH, WP=0/VDD
1
mA
IDD5
Standby Current (CMOS)
E=VDD-0.2,
WP=0/VDD
-
10
50
A
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
2.0
-
VDD+0.3
V
VIL
Input Low Voltage
-
-0.3
-
0.8
V
VOH
Output High Voltage Level
IOH = -100A
2.4
-
V
VOL
Output Low Voltage Level
IOL = 100A
-
0.4
V
IOL (RB)
Output Low Current (RB)
VOL = 0.4V
8
10
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
2.5
V
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NAND02GW3B3BN1F 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
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