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参数资料
| 型号： | NAND08GR3B2AN1F |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 55/57页 |
| 文件大小： | 887K |
| 代理商： | NAND08GR3B2AN1F |
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NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
SUMMARY DESCRIPTION
The NAND Flash 2112 Byte/ 1056 Word Page is a
family of non-volatile Flash memories that uses
NAND cell technology. The devices range from 1
Gbit to 8 Gbits and operate with either a 1.8V or 3V
voltage supply. The size of a Page is either 2112
Bytes (2048 + 64 spare) or 1056 Words (1024 + 32
spare) depending on whether the device has a x8
or x16 bus width.
The address lines are multiplexed with the Data In-
put/Output signals on a multiplexed x8 or x16 In-
put/Output bus. This interface reduces the pin
count and makes it possible to migrate to other
densities without changing the footprint.
Each block can be programmed and erased over
100,000 cycles. To extend the lifetime of NAND
Flash devices it is strongly recommended to imple-
ment an Error Correction Code (ECC).
The devices have hardware and software security
features:
■
A Write Protect pin is available to give a
hardware protection against program and
erase operations.
■
A Block Locking scheme is available to
provide user code and/or data protection.
The devices feature an open-drain Ready/Busy
output that can be used to identify if the Program/
Erase/Read (P/E/R) Controller is currently active.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor.
A Copy Back Program command is available to
optimize the management of defective blocks.
When a Page Program operation fails, the data
can be programmed in another page without hav-
ing to resend the data to be programmed.
Each device has Cache Program and Cache Read
features which improve the program and read
throughputs for large files. During Cache Program-
ming, the device loads the data in a Cache Regis-
ter while the previous data is transferred to the
Page Buffer and programmed into the memory ar-
ray. During Cache Reading, the device loads the
data in a Cache Register while the previous data
is transferred to the I/O Buffers to be read.
All devices have the Chip Enable Don’t Care fea-
ture, which allows code to be directly downloaded
by a microcontroller, as Chip Enable transitions
during the latency time do not stop the read oper-
ation.
All devices have the option of a Unique Identifier
(serial number), which allows each device to be
uniquely identified.
The Unique Identifier options is subject to an NDA
(Non Disclosure Agreement) and so not described
in the datasheet. For more details of this option
contact your nearest ST Sales office.
The devices are available in the following packag-
es:
■
TSOP48 (12 x 20mm) for all products
■
VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for
1Gb products
■
TFBGA63 (9.5 x 12 x 1.2mm, 0.8mm pitch) for
2Gb Dual Die products
For information on how to order these options refer
vices are shipped from the factory with Block 0 al-
ways valid and the memory content bits, in valid
blocks, erased to ’1’.
See Table 2., Product Description, for all the de-
vices available in the family.
相关PDF资料 |
PDF描述 |
|---|---|
| NAND04GW4B2AN1E | 256M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND02GW4B2AN1T | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND04GR4B2CN1F | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND08GW3B2CZL1F | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GR3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GR3B4CZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B2AN6E | 功能描述:闪存 4 GBit 2112 Byte 1056 WP 1.8v/3v RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND08GW3B2AN6F | 功能描述:闪存 4 GB 2112B 1056 Word Pg 1.8V/3V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND08GW3B2BN6E | 制造商:Micron Technology Inc 功能描述:NAND & S.MEDIA FLASH - Trays |
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