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参数资料
型号： NAND128R3A0CV6T
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 16M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
封装： 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
文件页数： 52/57页
文件大小： 916K
代理商： NAND128R3A0CV6T
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
56/57
REVISION HISTORY
Table 29. Document Revision History
Date
Version
Revision Details
06-Jun-2003
1.0
First Issue
07-Aug-2003
2.0
Design Phase
27-Oct-2003
3.0
Engineering Phase
03-Dec-2003
4.0
Document promoted from Target Specification to Preliminary Data status.
VCC changed to VDD and ICC to IDD.
Title of Table 2.. changed to “Product Description” and Page Program Typical Timing
for NANDXXXR3A devices corrected. Table 1., Product List, inserted on page 2.
13-Apr-2004
5.0
WSOP48 and VFBGA55 packages added, VFBGA63 (9 x 11 x 1mm) removed.
Figure 19., Cache Program Operation, modified and note 2 modified. Note removed
for tWLWH timing in Table 20., AC Characteristics for Command, Address, Data Input.
Meaning of tBLBH4 modified, partly replaced by tWHBH1 and tWHRL min for 3V devices
modified in Table 21., AC Characteristics for Operations.
References removed from RELATED DOCUMENTATION section and reference
made to ST Website instead.
Figure 6., Figure 7., Figure 29. and Figure 32. modified. Read Electronic Signature
paragraph clarified and Figure 28., Read Electronic Signature AC Waveform,
modified. Note 2 to Figure 30., Read C Operation, One Page AC Waveform, removed.
Note 3 to Table 7., Address Insertion, x16 Devices removed. Only 00h Pointer
operations are valid before a Cache Program operation. IDD4 removed from Table
18., DC Characteristics, 1.8V Devices. Note added to Figure 32., Block Erase AC
Waveform. Small text changes.
28-May-2004
6.0
TFBGA55 package added (mechanical data to be announced). 512Mb Dual Die
devices added. Figure 19., Cache Program Operation modified.
Package code changed for TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch
(1Gbit Dual Die devices) in Table 28., Ordering Information Scheme.
02-Jul-2004
7.0
Cache Program removed from document. TFBGA55 package specifications added
(Figure 40., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch, Package
Outline and Table 25., TFBGA55 8 x 10mm - 6x8 active ball array - 0.80mm pitch,
Package Mechanical Data).
Test conditions modified for VOL and VOH parameters in Table 19., DC Characteristics,
3V Devices.
01-Oct-2004
8.0
Third part number corrected in Table 1., Product List. 512 Mbit Dual Die information
added to Table 10., Copy Back Program Addresses. Block Erase last address cycle
modified. Definition of a Bad Block modified in Bad Block Management paragraph.
RoHS COMPLIANCE added to SUMMARY DESCRIPTION. Figure 3., Logic Block
Diagram modified.
Document promoted from Preliminary Data to Full Datasheet status.
03-Dec-2004
9.0
Automatic Page 0 Read at Power-Up option no longer available.
PC Demo board with simulation software removed from list of available development
tools. Chip Enable (E) paragraph clarified.
13-Dec-2004
10.0
Rref parameter added to Table 16., Operating and AC Measurement Conditions.
Description of the family clarified in the SUMMARY DESCRIPTION section.
25-Feb-2005
11.0
WSOP48 replaced with USOP48 package,
VFBGA63 (8.5 x 15 x 1mm) replaced with VFBGA63 (9 x 11 x 1mm) package,
TFBGA63 (8.5 x 15 x 1mm) replaced with TFBGA63 (9 x 11 x 1.2mm) package.
Changes to Table 21., Table 18. and Table 2.
相关PDF资料
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相关代理商/技术参数
参数描述
NAND128W3A0AN6 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND128W3A0AN6E 功能描述:闪存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND128W3A0AN6F 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND128W3A0BN6E 功能描述:闪存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND128W3A0BN6F 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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