参数资料
型号: NAND512W3B3BN6E
厂商: NUMONYX
元件分类: PROM
英文描述: 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 36/59页
文件大小: 998K
代理商: NAND512W3B3BN6E
41/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 22. DC Characteristics, 1.8V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
8
15
mA
IDD2
Program
-
8
15
mA
IDD3
Erase
-
8
15
mA
IDD5
Standby Current (CMOS)
E=VDD-0.2,
WP=0/VDD
-
10
50
A
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
VDD-0.4
-
VDD+0.3
V
VIL
Input Low Voltage
-
-0.3
-
0.4
V
VOH
Output High Voltage Level
IOH = -100A
VDD-0.1
-
V
VOL
Output Low Voltage Level
IOL = 100A
-
0.1
V
IOL (RB)
Output Low Current (RB)
VOL = 0.1V
3
4
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
1.5
V
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NAND512W3B3BZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
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